CXT2907A www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 104 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 10 nA CBO CB I V =50V, T=125C 10 A CBO CB A I V =30V, V=0.5V 50 nA CEV CE BE BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.4 V CE(SAT) C B V I =500mA, I=50mA 1.6 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =500mA, I=50mA 2.6 V BE(SAT) C B h V =10V, I=0.1mA 75 FE CE C h V =10V, I=1.0mA 100 FE CE C h V =10V, I=10mA 100 FE CE C h V =10V, I=150mA 100 300 FE CE C R7 (23-February 2010)CXT2907A SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I=500mA 50 FE CE C f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 30 pF ib BE C t V =30V, V =0.5, I =150mA, I=15mA 45 ns on CC BE C B1 t V =30V, V =0.5, I =150mA, I=15mA 10 ns d CC BE C B1 t V =30V, V =0.5, I =150mA, I=15mA 40 ns r CC BE C B1 t V =6.0V, I =150mA, I =I=15mA 100 ns off CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 80 ns s CC C B1 B2 t V =6.0V, I =150mA, I =I=15mA 30 ns f CC C B1 B2 SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base (Bottom View) MARKING: FULL PART NUMBER R7 (23-February 2010) www.centralsemi.com