CXT3019 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 140 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 1.0 A C Peak Collector Current I 1.5 A CM Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T T -65 to +175 C J, stg Thermal Resistance 125 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=90V 10 nA CBO CB I V=5.0V 10 nA EBO EB BV I=100A 140 V CBO C BV I=30mA 80 V CEO C BV I=100A 7.0 V EBO E V I =150mA, I=15mA 0.2 V CE(SAT) C B V I =500mA, I=50mA 0.5 V CE(SAT) C B V I =150mA, I=15mA 1.1 V BE(SAT) C B h V =10V, I=0.1mA 50 FE CE C h V =10V, I=10mA 90 FE CE C h V =10V, I=150mA 100 300 FE CE C h V =10V, I=500mA 50 FE CE C h V =10V, I =1.0A 15 FE CE C f V =10V, I =50mA, f=1.0MHz 100 MHz T CE C C V =10V, I =0, f=1.0MHz 12 pF ob CB E C V =0.5V, I =0, f=1.0MHz 60 pF ib EB C NF V =10V, I =100A, R =1.0k, CE C S f=1.0kHz 4.0 dB R7 (23-February 2010)CXT3019 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R7 (23-February 2010) www.centralsemi.com