X-On Electronics has gained recognition as a prominent supplier of CXT3904 TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CXT3904 TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CXT3904 TR Central Semiconductor

CXT3904 TR electronic component of Central Semiconductor
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Part No.CXT3904 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT NPN GP
Datasheet: CXT3904 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8371 ea
Line Total: USD 0.84 
Availability - 5010
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5010
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8371
10 : USD 0.6996
100 : USD 0.561
500 : USD 0.4675
1000 : USD 0.3762
2000 : USD 0.3641

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package Case
Brand
Dc Collectorbase Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CXT3904 TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CXT3904 TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CXT3904 NPN CXT3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CXT3904, SILICON TRANSISTORS CXT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (T =25C) SYMBOL CXT3904 CXT3906 UNITS A Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 C mA Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 104 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CXT3904 CXT3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB I V =30V, V=3.0V - 50 - 50 nA BL CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C R7 (23-February 2010)CXT3904 NPN CXT3906 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A CXT3904 CXT3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 mS oe CE C NF V =5.0V, I =100A, R =1.0k, CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5, I =10mA, I=1.0mA - 35 - 35 ns d CC BE C B1 t V =3.0V, V =0.5, I =10mA, I=1.0mA - 35 - 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC C B1 B2 SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base (Bottom View) MARKING: FULL PART NUMBER R7 (23-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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