CZT2955 PNP CZT3055 NPN www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CZT2955 and POWER TRANSISTORS CZT3055 are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 70 V CER Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 6.0 A C Continuous Base Current I 3.0 A B Power Dissipation P 2.0 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 62.5 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=30V 700 A CEO CE I V =100V, V=1.5V 1.0 mA CEV CE EB I V=7.0V 5.0 mA EBO EB BV I =30mA, R=100 70 V CER C BE BV I=30mA 60 V CEO C V I =4.0A, I=400mA 1.1 V CE(SAT) C B V V =4.0V, I=4.0A 1.5 V BE(ON) CE C h V =4.0V, I=4.0A 20 70 FE CE C h V =4.0V, I=6.0A 5.0 FE CE C f V =10V, I =500mA, f=1.0MHz 2.5 MHz T CE C R5 (3-October 2017)CZT2955 PNP CZT3055 NPN SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (3-October 2017) www.centralsemi.com