CZT2955 PNP
CZT3055 NPN
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
COMPLEMENTARY
The CENTRAL SEMICONDUCTOR CZT2955 and
SILICON POWER TRANSISTORS
CZT3055 types are surface mount epoxy molded
complementary silicon transistors manufactured by the
epitaxial base process, designed for surface mounted
power amplifier applications up to 6.0 amps.
MARKING: FULL PART NUMBER
SOT-223 CASESOT-223 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 100 V
CBO
Collector-Emitter Voltage V 70 V
CER
Collector-Emitter Voltage V 60 V
CEO
Emitter-Base Voltage V 7.0 V
EBO
Continuous Collector Current I 6.0 A
C
Continuous Base Current I 3.0 A
B
Power Dissipation P 2.0 W
D
Operating and Storage Junction Temperature T T -65 to +150 C
J, stg
Thermal Resistance 62.5 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V=30V 700 A
CEO CE
I V =100V, V=1.5V 1.0 mA
CEV CE EB
I V=7.0V 5.0 mA
EBO EB
BV I =30mA, R=100 70 V
CER C BE
BV I=30mA 60 V
CEO C
V I =4.0A, I=400mA 1.1 V
CE(SAT) C B
V V =4.0V, I=4.0A 1.5 V
BE(ON) CE C
h V =4.0V, I=4.0A 20 70
FE CE C
h V =4.0V, I=6.0A 5.0
FE CE C
f V =10V, I =500mA, f=1.0MHz 2.5 MHz
T CE C
R4 (1-March 2010)CZT2955 PNP
CZT3055 NPN
SURFACE MOUNT
COMPLEMENTARY
SILICON POWER TRANSISTORS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (1-March 2010)
www.centralsemi.com