CZT31C NPN CZT32C PNP www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CZT31C and POWER TRANSISTORS CZT32C are silicon surface mount epoxy molded complementary transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 3.0 A C Peak Collector Current I 6.0 A CM Continuous Base Current I 1.0 A B Power Dissipation P 2.0 W D Power Dissipation (T=25C) P 10 W C D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 62.5 C/W JA Thermal Resistance 12.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=100V 200 A CES CE I V=60V 300 A CEO CE I V=5.0V 1.0 mA EBO EB BV I=30mA 100 V CEO C V I =3.0A, I=375mA 1.2 V CE(SAT) C B V V =4.0V, I=3.0A 1.8 V BE(ON) CE C h V =4.0V, I=1.0A 25 FE CE C h V =4.0V, I=3.0A 10 100 FE CE C f V =10V, I =500mA, f=1.0MHz 3.0 MHz T CE C R5 (8-December 2017)CZT31C NPN CZT32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (8-December 2017) www.centralsemi.com