CZT955 www.centralsemi.com SURFACE MOUNT SILICON HIGH CURRENT DESCRIPTION: PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CZT955 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASESOT-223 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 140 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 4.0 A C Peak Collector Current I 10 A CM Power Dissipation (Note 1) P 3.0 W D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 41.7 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=150V 20 nA CBO CB I V =150V, T=100C 0.5 A CBO CB A I V =150V, R1.0k 20 nA CER CE BE I V=6.0V 10 nA EBO EB BV I=100A 180 200 V CBO C BV I =1.0A, R1.0k 180 200 V CER C BE BV I=10mA 140 160 V CEO C BV I=100A 7.0 8.0 V EBO E V I =100mA, I=5.0mA 40 60 mV CE(SAT) C B V I =0.5A, I=50mA 55 80 mV CE(SAT) C B V I =1.0A, I=100mA 85 120 mV CE(SAT) C B V I =3.0A, I=300mA 210 360 mV CE(SAT) C B V I =3.0A, I=300mA 0.96 1.04 V BE(SAT) C B V V =5.0V, I=3.0A 830 930 mV BE(ON) CE C h V =5.0V, I=10mA 100 250 FE CE C h V =5.0V, I=1.0A 100 220 300 FE CE C h V =5.0V, I=3.0A 35 FE CE C h V =5.0V, I=10A 5.0 FE CE C f V =10V, I =100mA, f=50MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 33 pF ob CB E t V =50V, I =1.0A, I =I=0.1A 25 ns on CC C B1 B2 t V =50V, I =1.0A, I =I=0.1A 410 ns off CC C B1 B2 2 Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in (minimum) R2 (11-June 2013)CZT955 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE 4 12 3 LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R2 (11-June 2013) www.centralsemi.com