D40D1 D40D5 D40D11 D40D2 D40D7 D40D13 D40D3 D40D8 D40D14 www.centralsemi.com D40D4 D40D10 DESCRIPTION: NPN SILICON The CENTRAL SEMICONDUCTOR D40D series types POWER TRANSISTOR are NPN silicon power transistors designed for amplifier and switching applications. The PNP complementary types are the D41D series. MARKING: FULL PART NUMBER TO-202 CASE D40D10 D40D1 D40D11 D40D2 D40D4 D40D7 D40D13 MAXIMUM RATINGS: (T =25C) SYMBOL D40D3 D40D5 D40D8 D40D14 UNITS C Collector-Emitter Voltage V 45 60 75 90 V CES Collector-Emitter Voltage V 30 45 60 75 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Peak Collector Current I 1.5 A CM Power Dissipation P 6.25 W D Operating and Storage Junction Temperature T , T -65 to +150 C Jstg Thermal Resistance 20 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 100 nA CES CE CES I V=5.0V 100 nA EBO EB BV l =10mA (D40D1, 2, 3) 30 V CEO C BV l =10mA (D40D4, 5) 45 V CEO C BV l =10mA (D40D7, 8) 60 V CEO C BV l =10mA (D40D10, 11, 13, 14) 75 V CEO C V l =500mA, I =50mA (D40D1, 2, 4, 5) 0.5 V CE(SAT) C B V l =500mA, I =50mA (D40D7, 8, 10, 11, 13, 14) 1.0 V CE(SAT) C B V l =500mA, I=50mA 1.5 V BE(SAT) C B D40D1 D40D4 D40D5 D40D7 D40D8 D40D10 D40D11 D40D13 D40D2 D40D3 D40D14 MIN MAX MIN MAX MIN MAX MIN MAX h V =2.0V, I=100mA 50 150 120 360 290 - 120 360 FE CE C h V =2.0V, I=1.0A FE CE C (Except D40D13, 14) 10 - 20 - 10 - 10 - R1 (23-January 2012)D40D1 D40D5 D40D11 D40D2 D40D7 D40D13 D40D3 D40D8 D40D14 D40D4 D40D10 NPN SILICON POWER TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R1 (23-January 2012) www.centralsemi.com