CJD44H11 NPN CJD45H11 PNP www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CJD44H11 and POWER TRANSISTORS CJD45H11 are complementary silicon power transistors manufactured in a surface mount package, and designed for switching and power amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 8.0 A C Peak Collector Current I 16 A CM Power Dissipation P 20 W D Power Dissipation (T=25C) P 1.75 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 6.25 C/W JC Thermal Resistance 71.4 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=80V 10 A CES CE I V=5.0V 50 A EBO EB BV I=30mA 80 V CEO C V I =8.0A, I =400mA 1.0 V CE(SAT) C B V I =8.0A, I =800mA 1.5 V BE(SAT) C B h V =1.0V, I=2.0A 60 FE CE C h V =1.0V, I=4.0A 40 FE CE C f V =10V, I =500mA, f=20MHz (CJD44H11) 60 MHz T CE C f V =10V, I =500mA, f=20MHz (CJD45H11) 50 MHz T CE C C V =10V, I =0, f=0.1MHz (CJD44H11) 120 pF ob CB E C V =10V, I =0, f=0.1MHz (CJD45H11) 220 pF ob CB E t + t I =5.0A, I =500mA (CJD44H11) 320 ns d r C B1 t + t I =5.0A, I =500mA (CJD45H11) 150 ns d r C B1 t I =5.0A, I =I=500mA 450 ns s C B1 B2 t I =5.0A, I =I =500mA (CJD44H11) 130 ns f C B1 B2 t I =5.0A, I =I =500mA (CJD45H11) 100 ns f C B1 B2 R3 (21-January 2013)CJD44H11 NPN CJD45H11 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (21-January 2013) www.centralsemi.com