X-On Electronics has gained recognition as a prominent supplier of MJE13005 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE13005 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE13005 Central Semiconductor

MJE13005 electronic component of Central Semiconductor
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See Product Specifications
Part No.MJE13005
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Fast SW
Datasheet: MJE13005 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.047 ea
Line Total: USD 3.05 
Availability - 299
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
299
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.047
10 : USD 2.882
50 : USD 2.079
100 : USD 1.925
500 : USD 1.892
1000 : USD 1.661
2500 : USD 1.639
5000 : USD 1.617

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the MJE13005 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE13005 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (T =25C unless otherwise noted) C SYMBOL UNITS Collector-Emitter Voltage V 400 V CEO Collector-Emitter Voltage V 700 V CEV Emitter-Base Voltage V 9.0 V EBO Collector Current I 4.0 A C Peak Collector Current I 8.0 A CM Base Current I 2.0 A B Peak Base Current I 4.0 A BM Emitter Current I 6.0 A E Peak Emitter Current I 12 A EM Power Dissipation (T=25C) P 2.0 W A D Power Dissipation P 75 W D Operating and Storage Junction Temperature T ,T -65 to +150 C J stg Thermal Resistance 62.5 C/W JA Thermal Resistance 1.67 C/W JC ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =700V V =1.5V 1.0 mA CEV CE , BE(OFF) I V =700V V =1.5V, T=100C 5.0 mA CEV CE , BE(OFF) C I V=9.0V 1.0 mA EBO EB BV I=10mA 400 V CEO C V I =1.0A, I=0.2A 0.5 V CE(SAT) C B V I =2.0A, I=0.5A 0.6 V CE(SAT) C B V I =4.0A, I=1.0A 1.0 V CE(SAT) C B V I =1.0A, I=0.2A 1.2 V BE(SAT) C B V I =2.0A, I=0.5A 1.6 V BE(SAT) C B h V =5.0V, I=1.0A 10 60 FE CE C h V =5.0V, I=2.0A 8.0 40 FE CE C (Continued) R1 MJE13005 NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS f V =10V, I =500mA, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz 130 pF ob CB E Resistive Load t V =125V, I =2.0A, I = I=0.4A 0.1 s d CC C B1 B2 t t =25s, Duty Cycle 1.0% 0.7 s r p t 4.0 s s t 0.9 s f Inductive Load t I =2.0A, V =300V, I=0.4A, 4.0 s sv C clamp B1 t V =5.0V, T=100C 0.9 s c BE(off) C t 0.16 s fi TO-220 PACKAGE - MECHANICAL OUTLINE A DIMENSIONS E INCHES MILLIMETERS F SYMBOL MIN MAX MIN MAX B A 0.170 0.190 4.31 4.82 B 0.045 0.055 1.15 1.39 G C 0.013 0.026 0.33 0.65 H D 0.083 0.107 2.10 2.72 E 0.394 0.417 10.01 10.60 I F (DIA) 0.140 0.157 3.55 4.00 G 0.100 0.118 2.54 3.00 H 0.230 0.270 5.85 6.85 12 3 I 0.560 0.625 14.23 15.87 J - 0.250 - 6.35 J K 0.025 0.038 0.64 0.96 L 0.500 0.579 12.70 14.70 M 0.090 0.110 2.29 2.79 C L K TO-220 (REV: R2) D M Lead Code: R2 1) Base 2) Collector 3) Emitter Tab is Common to Pin 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.
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