MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: (T =25C) A SYMBOL MPQ3798 MPQ3799 UNITS Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Collector Current I 50 mA C Power Dissipation (Each Transistor) P 500 mW D Power Dissipation (Total Package) P 900 mW D Operating and Storage Junction Temperature T ,T -65 to +150 C J stg Thermal Resistance (Total Package) 139 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A MPQ3798 MPQ3799 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =50V 10 10 nA CBO CB I V =3.0V 20 20 nA EBO EB BV I =10 A 60 60 V CBO C BV I =10mA 40 60 V CEO C BV I =10 A 5.0 5.0 V EBO E V I =100A, I =10A 0.2 0.2 V CE(SAT) C B V I =1.0mA, I =100A 0.25 0.25 V CE(SAT) C B V I =100A, I =10A 0.7 0.7 V BE(SAT) C B V I =1.0mA, I =100A 0.8 0.8 V BE(SAT) C B h V =5.0V, I=10A 100 225 FE CE C h V =5.0V, I=100A 150 300 FE CE C h V =5.0V, I=500A 150 300 FE CE C h V =5.0V, I=10mA 125 250 FE CE C f V =5.0V, I =1.0mA, f=100MHz 60 60 MHz T CE C C V =5.0V, I =0, f=1.0MHz 4.0 4.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 8.0 8.0 pF ib EB C NF V =10V, I =100A, R =3k , CE C S f=10Hz to 15.7kHz 2.5 TYP 1.5 TYP dB (SEE REVERSE SIDE) MPQ3798 / MPQ3799 PNP SILICON QUAD TRASISTOR TO-116 CASE - MECHANICAL OUTLINE .008(0.20) 14 8 .015(0.38) .220(5.59) .325(8.26) .280(7.11) MAXIMUM 0 1 7 15 .660(16.76) .785(19.94) .200(5.08) .020(0.51) MAXIMUM MINIMUM .100(2.54) MINIMUM .015(0.38) .090(2.29) .023(0.58) .110(2.79) .190(4.83) .030(0.76) .210(5.33) .070(1.78) .290(7.37) .310(7.87) All Dimensions in Inches (mm). PIN CONFIGURATION 14 8 CB E E B C Q Q 4 3 Q Q 1 2 CB E E B C 17