MPQ6002 MPQ6502 www.centralsemi.com SILICON QUAD DESCRIPTION: COMPLEMENTARY TRANSISTORS The CENTRAL SEMICONDUCTOR MPQ6002 and MPQ6502 types are silicon complementary pair transistors, mounted in a 14 pin DIP package, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (per transistor) P 650 mW D Power Dissipation (total package) P 1.25 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (total package) 100 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=50V 30 nA CBO CB I V=3.0V 30 nA EBO EB BV I=10A 60 V CBO C BV I=10mA 30 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.4 V CE(SAT) C B V I =300mA, I=30mA 1.4 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =300mA, I=30mA 2.0 V BE(SAT) C B h V =10V, I=1.0mA 50 FE CE C h V =10V, I=10mA 75 FE CE C h V =10V, I=150mA 100 FE CE C h V =10V, I=300mA 30 FE CE C f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 30 pF ib EB C t V =30V, V =0.5V, I =150mA, I =15mA 30 ns on CC BE C B1 t V =30V, I =150mA, I =I=15mA 225 ns off CC C B1 B2 R1 (8-April 2013)MPQ6002 MPQ6502 SILICON QUAD COMPLEMENTARY TRANSISTORS TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS LEAD CODE: 1) Collector Q1 8) Collector Q3 2) Base Q1 9) Base Q3 3) Emitter Q1 10) Emitter Q3 4) No Connection 11) No Connection 5) Emitter Q2 12) Emitter Q4 6) Base Q2 13) Base Q4 7) Collector Q2 14) Collector Q4 MARKING: FULL PART NUMBER R1 (8-April 2013) www.centralsemi.com