MPQ7093 www.centralsemi.com SILICON HIGH VOLTAGE DESCRIPTION: QUAD PNP TRANSISTOR The CENTRAL SEMICONDUCTOR MPQ7093 is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 250 V CBO Collector-Emitter Voltage V 250 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (per transistor) P 750 mW D Power Dissipation (total package) P 1700 mW D Power Dissipation (T =25C) (total package) P 3.0 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=180V 250 nA CBO CB I V=3.0V 100 nA EBO EB BV I=100A 250 V CBO C BV I=1.0mA 250 V CEO C BV I=100A 5.0 V EBO E V I =20mA, I=2.0mA 0.5 V CE(SAT) C B V I =20mA, I=2.0mA 0.9 V BE(SAT) C B h V =10V, I=1.0mA 25 FE CE C h V =10V, I=10mA 35 FE CE C h V =10V, I=30mA 25 FE CE C f V =20V, I =10mA, f=100MHz 50 MHz T CE C C V =20V, I =0, f=1.0MHz 5.0 pF ob CB E C V =3.0V, I =0, f=1.0MHz 75 pF ib EB C R0 (14-June 2013)MPQ7093 SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 8) Collector Q3 2) Base Q1 9) Base Q3 3) Emitter Q1 10) Emitter Q3 4) No Connection 11) No Connection 5) Emitter Q2 12) Emitter Q4 6) Base Q2 13) Base Q4 7) Collector Q2 14) Collector Q4 MARKING: FULL PART NUMBER R0 (14-June 2013) www.centralsemi.com