MPS6519 Central Semiconductor

DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (T =25C unless otherwise noted) A MPS6516 MPS6512 MPS6514 MPS6517 SYMBOL MPS6513 MPS6515 MPS6518 MPS6519 UNITS Collector-Base Voltage V 40 40 40 25 V CBO Collector-Emitter Voltage V 30 25 40 25 V CEO Emitter-Base Voltage V 4.0 V EBO Collector Current I 100 mA C Power Dissipation P 625 mW D Power Dissipation (T =25C) P 1.5 W C D Operating and Storage Junction Temperature T ,T -65 to +150 C J stg Thermal Resistance 83.3 C/W JC Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A MPS6516 MPS6512 MPS6514 MPS6517 MPS6513 MPS6515 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS I V =30V 50 50 50 - nA CBO CB I V =20V - - - 50 nA CBO CB BV I =0.5mA 30 25 40 25 V CEO C BV I =10A 4.0 4.0 4.0 4.0 V EBO E V I =50mA, I =5.0mA 0.5 0.5 0.5 0.5 V CE(SAT) C B C V =10V, I =0, f=100kHz 3.5 3.5 4.0 4.0 pF ob CB E MPS6512 MPS6513 MPS6514 MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX h V =10V, I =2.0mA 50 100 90 180 150 300 250 500 FE CE C h V =10V, I =100mA 30 60 90 150 FE CE C (Continued) R0 MPS6512 SERIES (NPN) / MPS6516 SERIES (PNP) SILICON TRANSISTOR Page 2 of 2 TO-92 PACKAGE - MECHANICAL OUTLINE A DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX B 1 2 3 A (DIA) 0.175 0.205 4.45 5.21 B 0.170 0.210 4.32 5.33 C 0.500 - 12.70 - D 0.016 0.022 0.41 0.56 E 0.100 2.54 C F 0.050 1.27 G 0.125 0.165 3.18 4.19 H 0.080 0.105 2.03 2.67 I 0.015 0.38 TO-92 (REV: R1) D LEAD CODE E F 1. Emitter 2. Base G 3. Collector H I R1