MPS6521 PBFREE Central Semiconductor

MPS6520 MPS6521 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR MPS6520 and MPS6521 are silicon NPN epitaxial transistors designed for complementary amplifier applications requiring low noise and high DC current gains. The PNP complementary devices are MPS6522 and MPS6523 respectively. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 4.0 V EBO Continuous Collector Current I 100 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=30V 50 nA CBO CB I V =30V, T=60C 1.0 A CBO CB A BV I=500A 25 V CEO C BV I=10A 4.0 V EBO E V I =50mA, I=5.0mA 0.5 V CE(SAT) C B f V =10V, I=2.0mA 300 MHz T CE C f V =10V, I=10mA 400 MHz T CE C C V =10V, I =0, f=100kHz 3.5 pF ob CB E NF V =5.0V, I=10A, CE C R =10K, BW=15.7kHz, S 3.0dB points 10Hz and 10kHz 3.0 dB MPS6520 MPS6521 SYMBOL TEST CONDITIONS MIN MAX MIN MAX h V =10V, I=100A 100 - 150 - FE CE C h V =10V, I=2.0mA 200 400 300 600 FE CE C R1 (11-November 2014)MPS6520 MPS6521 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (11-November 2014) www.centralsemi.com