MPS750 BK Central Semiconductor

MPS650 MPS651 NPN MPS750 MPS751 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR MPS650, MPS750 series devices are complementary silicon transistors designed for general purpose amplifier and switching applications requiring high gain at high collector current. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) MPS650 MPS651 A SYMBOL MPS750 MPS751 UNITS Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 2.0 A C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC MPS650 MPS651 ELECTRICAL CHARACTERISTICS: (T =25C) MPS750 MPS751 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=60V - 100 - - nA CBO CB I V=80V - - - 100 nA CBO CB I V=4.0V - 100 - 100 nA EBO EB BV I=100A 60 - 80 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =1.0A, I=100mA - 0.3 - 0.3 V CE(SAT) C B V I =2.0A, I=200mA - 0.5 - 0.5 V CE(SAT) C B V I =1.0A, I=100mA - 1.2 - 1.2 V BE(SAT) C B V V =2.0V, I=1.0A - 1.0 - 1.0 V BE(ON) CE C h V =2.0V, I=50mA 75 - 75 - FE CE C h V =2.0V, I=500mA 75 - 75 - FE CE C h V =2.0V, I=1.0A 75 - 75 - FE CE C h V =2.0V, I=2.0A 40 - 40 - FE CE C f V =5.0V, I =50mA, f=100MHz 75 - 75 - MHz T CE C R1 (2-December 2014)MPS650 MPS651 NPN MPS750 MPS751 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS R1 (2-December 2014) www.centralsemi.com