X-On Electronics has gained recognition as a prominent supplier of PN4250A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PN4250A Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PN4250A Central Semiconductor

PN4250A electronic component of Central Semiconductor
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See Product Specifications
Part No.PN4250A
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP Low Noise
Datasheet: PN4250A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.553 ea
Line Total: USD 0.55

Availability - 19631
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9976
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4473
10 : USD 0.3875
100 : USD 0.2933
500 : USD 0.2369
1000 : USD 0.1886
2500 : USD 0.1737
10000 : USD 0.1587
25000 : USD 0.1552
50000 : USD 0.1529

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the PN4250A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PN4250A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PN4250A www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTOR The CENTRAL SEMICONDUCTOR PN4250A is a silicon PNP transistor designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CES Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 83.3 C/W JC Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 10 nA CBO CB I V=3.0V 20 nA EBO EB BV I=10A 60 V CBO C BV I=10A 60 V CES C BV I=5.0mA 60 V CEO C BV I=10A 5.0 V EBO E V I =10mA, I=0.5mA 0.25 V CE(SAT) C B h V =5.0V, I=100A 250 700 FE CE C C V =5.0V, f=1.0MHz 6.0 pF ob CB h V =5.0V, I =1.0mA, f=1.0kHz 250 800 fe CE C h V =5.0V, I =1.0mA, f=1.0kHz 6.0 20 k ie CE C h V =5.0V, I =1.0mA, f=1.0kHz 5.0 50 S oe CE C -4 h V =5.0V, I =1.0mA, f=1.0kHz 10 x10 re CE C NF V =5.0V, I =250A, R=1.0k CE C S f=1.0kHz, BW=150Hz 2.0 dB NF V =5.0V, I =20A, R=10k CE C S f=1.0kHz, BW=150Hz 2.0 dB R0 (26-July 2013)PN4250A SILICON PNP TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (26-July 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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