TIP41 TIP41A TIP41B www.centralsemi.com TIP41C DESCRIPTION: NPN SILICON The CENTRAL SEMICONDUCTOR TIP41 SERIES POWER TRANSISTOR types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (T =25C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS C Collector-Base Voltage V 40 60 80 100 V CBO Collector-Emitter Voltage V 40 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 6.0 A C Peak Collector Current I 10 A CM Continuous Base Current I 2.0 A B Power Dissipation P 65 W D Power Dissipation (T=25C) P 2.0 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =30V (TIP41, TIP41A) 0.7 mA CEO CE I V =60V (TIP41B, TIP41C) 0.7 mA CEO CE I V =Rated V 0.4 mA CES CE CEO I V=5.0V 1.0 mA EBO EB BV I =30mA (TIP41) 40 V CEO C BV I =30mA (TIP41A) 60 V CEO C BV I =30mA (TIP41B) 80 V CEO C BV I =30mA (TIP41C) 100 V CEO C V I =6.0A, I=0.6A 1.5 V CE(SAT) C B V V =4.0V, I=6.0A 2.0 V BE(ON) CE C h V =4.0V, I=0.3A 30 FE CE C h V =4.0V, I=3.0A 15 75 FE CE C h V =10V, I =0.5A, f=1.0kHz 20 fe CE C f V =10V, I =0.5A, f=1.0MHz 3.0 MHz T CE C t I =6.0A, I = I =0.6A, R=5.0 0.6 s on C B1 B2 L t I =6.0A, I = I =0.6A, R=5.0 1.0 s off C B1 B2 L R1 (13-December 2010) TIP41 TIP41A TIP41B TIP41C NPN SILICON POWER TRANSISTOR TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (13-December 2010) www.centralsemi.com