X-On Electronics has gained recognition as a prominent supplier of SI2309A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SI2309A Bipolar Transistors - BJT are a product manufactured by HXY MOS. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SI2309A HXY MOS

SI2309A electronic component of HXY MOS
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See Product Specifications
Part No.SI2309A
Manufacturer: HXY MOS
Category: Bipolar Transistors - BJT
Description: SOT-23 Bipolar Transistors - BJT ROHS
Datasheet: SI2309A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0678 ea
Line Total: USD 0.34 
Availability - 650
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
650
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0678
50 : USD 0.0561
150 : USD 0.0505
500 : USD 0.0462
3000 : USD 0.0344
6000 : USD 0.0328

   
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Package
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We are delighted to provide the SI2309A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2309A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FETThe SI2309A with SOT-23 Bipolar Transistors - BJT ROHS manufactured by HXY MOSFET is a 3-terminal Mono & N-Channel Enhancement Mode MOSFET that features low gate-charge and fast switching speed. This device is suitable for low voltage and high current switching applications, and its small package minimizes the heater distribution area and reduces the circuit size. The device offers a low on-resistance and extended drain-source breakdown voltage that ranges from 5 V to 30 V. It also comes with an extended JEDEC temperature range of -55°C to 150°C. The device is compliant with RoHS standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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