AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology V 40V DSS Ultra Low On-Resistance 175C Operating Temperature R max. 1.6m DS(on) Fast Switching I 320A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant I 240A D (Package Limited) Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching 2 D Pak 7 Pin speed and improved repetitive avalanche rating . These AUIRF2804S-7P features combine to make this design an extremely efficient and reliable device for use in Automotive G D S applications and a wide variety of other applications. Gate Drain Source Standard Pack Base Part Number Package Type Complete Part Number Form Quantity AUIRF2804S-7P Tube 50 2 AUIRF2804S-7P D Pak-7PIN Tape and Reel Left 800 AUIRF2804S-7TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 320 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 230 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I Pulsed Drain Current 1360 DM P T = 25C Maximum Power Dissipation 330 W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 630 AS mJ E Single Pulse Avalanche Energy Tested Value 1050 AS (tested) I Avalanche Current See Fig.12a,12b,15,16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC R Case-to-Sink, Flat, Greased Surface 0.50 CS C/W Junction-to-Ambient 62 R JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11 AUIRF2804S-7P Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1.0mA V / T D (BR)DSS J 1.2 1.6 V = 10V, I = 160A R SMD Static Drain-to-Source On-Resistance m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 220 S V = 10V, I = 160A DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 170 260 I = 160A g D Q Gate-to-Source Charge 63 nC V = 32V DS gs Q Gate-to-Drain Mille) Charge 71 V = 10V gd GS t Turn-On Delay Time 17 V = 20V d(on) DD I = 160A t Rise Time 150 r D ns t Turn-Off Delay Time 110 R = 2.6 d(off) G t Fall Time 100 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 6930 V = 0V iss GS C Output Capacitance 1750 V = 25V oss DS C Reverse Transfer Capacitance 970 pF = 1.0 MHz, See Fig. 5 rss C Output Capacitance 5740 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1570 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 2340 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 320 S (Body Diode) showing the A integral reverse Pulsed Source Current I 1360 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 160A, V = 0V SD J S GS 43 65 T = 25C, I = 160A, V = 20V t Reverse Recovery Time ns rr J F DD 48 72 di/dt = 100A/s Q Reverse Recovery Charge nC rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. (See fig. 11). Limited by T , starting T = 25C, L=0.049mH, R = 25 , I = 160A, V =10V. Part not recommended for use above this value. Jmax J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as Coss while V is rising from 0 to 80% V . oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L= 0.049mH, R = 25, I = 160A, V =10V. J G AS GS This is applied to D2Pak, when mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. R is measured at T of approximately 90C. J 2 2015-11-11