X-On Electronics has gained recognition as a prominent supplier of BC807UE6327HTSA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807UE6327HTSA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC807UE6327HTSA1 Infineon

BC807UE6327HTSA1 electronic component of Infineon
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Part No.BC807UE6327HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 45V 0.5A Automotive 6-Pin SC-74 T/R
Datasheet: BC807UE6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3443 ea
Line Total: USD 0.34 
Availability - 28982
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28982
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3443
10 : USD 0.3388
100 : USD 0.2695
1000 : USD 0.154
3000 : USD 0.1144
9000 : USD 0.0924
24000 : USD 0.0869
45000 : USD 0.0825
99000 : USD 0.0814

148410
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 9000
Multiples : 9000
9000 : USD 0.1256

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Frequency
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain
Operating Temperature Classification
Category
Rad Hardened
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We are delighted to provide the BC807UE6327HTSA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC807UE6327HTSA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807U PNP Silicon AF Transistor Array For AF input stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistor with good matching in on package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package BC807U 5Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 45 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 500 mA Collector current I C 1000 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 330 mW Total power dissipation- P tot T 115 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 2011-08-11BC807U Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 105 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 45 - - V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 25 V, I = 0 - - 0.1 CB E V = 25 V, I = 0 , T = 150 C - - 50 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 2) - DC current gain h FE I = 100 mA, V = 1 V 160 250 400 C CE I = 500 mA, V = 1 V 40 - - C CE 2) Collector-emitter saturation voltage V - - 0.7 V CEsat I = 500 mA, I = 50 mA C B 2) Base emitter saturation voltage V - - 1.2 BEsat I = 500 mA, I = 50 mA C B AC Characteristics - 200 - MHz Transition frequency f T I = 50 mA, V = 5 V, f = 100 MHz C CE - 8 - pF Collector-base capacitance C cb f = 1 MHz, V = 10 V BE Emitter-base capacitance C - 60 - eb V = 0.5 V, f = 1 MHz EB 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 Pulse test: t < 300s D < 2% 2 2011-08-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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