BC817K40E6327HTSA1 Infineon

BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs 1 = B 2 = E 3 = C - - - SOT23 BC817K-25W 6Bs 1 = B 2 = E 3 = C - - - SOT323 BC817K-40 6Cs 1 = B 2 = E 3 = C - - - SOT23 BC817K-40W 6Cs 1 = B 2 = E 3 = C - - - SOT323 BC818K-16W 6Es 1 = B 2 = E 3 = C - - - SOT323 BC818K-40 6Gs 1 = B 2 = E 3 = C - - - SOT23 2011-09-19 1BC817K.../BC818K... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC817... 45 BC818... 25 Collector-base voltage V CBO BC817... 50 BC818... 30 5 Emitter-base voltage V EBO 500 mA Collector current I C 1000 Peak collector current I CM 100 Base current I B 200 Peak base current I BM mW Total power dissipation- P tot T 115 C, BC817K, BC818K 500 S T 130 C, BC817KW, BC818KW 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC817K, BC818K 70 BC817KW, BC818KW 80 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-19 2