BC817U NPN Silicon AF Transistor Array For AF stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-saturation voltage Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking Pin Configuration Package BC817U 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 45 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 500 mA Collector current I C 1000 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 330 mW Total power dissipation- P tot T 115 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 2011-09-20BC817U Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 105 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 45 - - V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 25 V, I = 0 - - 0.1 CB E V = 25 V, I = 0 , T = 150 C - - 50 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 2) - DC current gain h FE I = 100 mA, V = 1 V 160 250 400 C CE I = 300 mA, V = 1 V 100 - - C CE 2) Collector-emitter saturation voltage V - - 0.7 V CEsat I = 500 mA, I = 50 mA C B 2) Base emitter saturation voltage V - - 1.2 BEsat I = 500 mA, I = 50 mA C B AC Characteristics - 170 - MHz Transition frequency f T I = 50 mA, V = 5 V, f = 100 MHz C CE - 6 - pF Collector-base capacitance C cb f = 1 MHz, V = 10 V BE Emitter-base capacitance C - 60 - eb V = 0.5 V, f = 1 MHz EB 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2 2011-09-20