BC847...-BC850...
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC857...-BC860...(PNP)
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
1
BC847BL3 is not qualified according AEC Q101
Type Marking Pin Configuration Package
BC847A 1Es 1=B 2=E 3=C - - - SOT23
BC847B 1Fs 1=B 2=E 3=C - - - SOT23
BC847BL3* 1F 1=B 2=E 3=C - - - TSLP-3-1
BC847BW 1Fs 1=B 2=E 3=C - - - SOT323
BC847C 1Gs 1=B 2=E 3=C - - - SOT23
BC847CW 1Gs 1=B 2=E 3=C - - - SOT323
BC848A 1Js 1=B 2=E 3=C - - - SOT23
BC848B 1Ks 1=B 2=E 3=C - - - SOT23
BC848BL3 1K 1=B 2=E 3=C - - - TSLP-3-1
BC848BW 1Ks 1=B 2=E 3=C - - - SOT323
BC848C 1Ls 1=B 2=E 3=C - - - SOT23
BC848CW 1Ls 1=B 2=E 3=C - - - SOT323
BC849B 2Bs 1=B 2=E 3=C - - - SOT23
BC849C 2Cs 1=B 2=E 3=C - - - SOT23
BC849CW 2Cs 1=B 2=E 3=C - - - SOT323
BC850B 2Fs 1=B 2=E 3=C - - - SOT23
BC850BW 2Fs 1=B 2=E 3=C - - - SOT323
BC850C 2Gs 1=B 2=E 3=C - - - SOT23
BC850CW 2Gs 1=B 2=E 3=C - - - SOT323
* Not qualified according AEC Q101
2011-09-09
1BC847...-BC850...
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage V
CEO
BC847..., BC850... 45
BC848..., BC849... 30
Collector-emitter voltage V
CES
BC847..., BC850... 50
BC848..., BC849... 30
Collector-base voltage V
CBO
BC847..., BC850... 50
BC848..., BC849... 30
Emitter-base voltage V
EBO
BC847..., BC850... 6
BC848..., BC849... 6
100 mA
Collector current I
C
200
Peak collector current, t 10 ms I
p CM
mW
Total power dissipation- P
tot
T 71 C, BC847-BC850 330
S
T 135 C, BC847BL3-BC848BL3 250
S
T 124 C, BC847W-BC850W 250
S
150 C
Junction temperature T
j
Storage temperature T -65 ... 150
stg
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R
thJS
BC847-BC850 240
BC847BL3-BC848BL3 60
BC847W-BC850W 105
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-09-09
2