BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin Configuration Package BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BL3* 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BL3 1K 1=B 2=E 3=C - - - TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C - - - SOT323 BC848C 1Ls 1=B 2=E 3=C - - - SOT23 BC848CW 1Ls 1=B 2=E 3=C - - - SOT323 BC849B 2Bs 1=B 2=E 3=C - - - SOT23 BC849C 2Cs 1=B 2=E 3=C - - - SOT23 BC849CW 2Cs 1=B 2=E 3=C - - - SOT323 BC850B 2Fs 1=B 2=E 3=C - - - SOT23 BC850BW 2Fs 1=B 2=E 3=C - - - SOT323 BC850C 2Gs 1=B 2=E 3=C - - - SOT23 BC850CW 2Gs 1=B 2=E 3=C - - - SOT323 * Not qualified according AEC Q101 2011-09-09 1BC847...-BC850... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC847..., BC850... 45 BC848..., BC849... 30 Collector-emitter voltage V CES BC847..., BC850... 50 BC848..., BC849... 30 Collector-base voltage V CBO BC847..., BC850... 50 BC848..., BC849... 30 Emitter-base voltage V EBO BC847..., BC850... 6 BC848..., BC849... 6 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM mW Total power dissipation- P tot T 71 C, BC847-BC850 330 S T 135 C, BC847BL3-BC848BL3 250 S T 124 C, BC847W-BC850W 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC847-BC850 240 BC847BL3-BC848BL3 60 BC847W-BC850W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-09 2