BC856SH6327XTSA1 Infineon

BC856S/U BC857S PNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BC856S/U BC857S C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package BC856S 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BC856U 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BC857S 3Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 2011-07-25 1BC856S/U BC857S Maximum Ratings Parameter Symbol Value Unit - Collector-emitter voltage V CEO BC856S/U 65 BC857S 45 V Collector-base voltage V CBO BC856S, BC856U 80 BC857S 50 5 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM - Total power dissipation- P tot T 115 C, BC856S 250 S T 118 C, BC856U, BC857U 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC856S, BC857S 140 BC856U 130 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-07-25 2