BC860BWH6327XTSA1 Infineon

BC857...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 1 BC857BL3 is not qualified according AEC Q101 Type Marking Pin Configuration Package BC857A 3Es 1=B 2=E 3=C - - - SOT23 BC857B 3Fs 1=B 2=E 3=C - - - SOT23 BC857BL3* 3F 1=B 2=E 3=C - - - TSLP-3-1 BC857BW 3Fs 1=B 2=E 3=C - - - SOT323 BC857C 3Gs 1=B 2=E 3=C - - - SOT23 BC857CW 3Gs 1=B 2=E 3=C - - - SOT323 BC858A 3Js 1=B 2=E 3=C - - - SOT23 BC858B 3Ks 1=B 2=E 3=C - - - SOT23 BC858BW 3Ks 1=B 2=E 3=C - - - SOT323 BC858C 3Ls 1=B 2=E 3=C - - - SOT23 BC858CW 3Ls 1=B 2=E 3=C - - - SOT323 BC859C 4Cs 1=B 2=E 3=C - - - SOT23 BC860B 4Fs 1=B 2=E 3=C - - - SOT23 BC860BW 4Fs 1=B 2=E 3=C - - - SOT323 BC860CW 4Gs 1=B 2=E 3=C - - - SOT323 * Not qualified according AEC Q101 2011-09-19 1BC857...-BC860... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC857..., BC860... 45 BC858..., BC859... 30 Collector-base voltage V CBO BC857..., BC860... 50 BC858..., BC859... 30 5 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM Total power dissipation P mW tot T 71 C, BC857-BC860 330 S T 135 C, BC857BL3 250 S T 124 C, BC857W-BC860W 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC857-BC860 240 BC857BL3 60 BC857W-BC860W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-19 2