BCP5316H6327XTSA1 Infineon

BCP51...-BCP53... PNP Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 ... BCP56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCP51 * 1=B 2=C 3=E 4=C - - SOT223 BCP51-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP52-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP53-10 * 1=B 2=C 3=E 4=C - - SOT223 BCP53-16 * 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as type-name 2011-10-13 1BCP51...-BCP53... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCP51 45 BCP52 60 BCP53 80 Collector-base voltage V CBO BCP51 45 BCP52 60 BCP53 100 5 Emitter-base voltage V EBO 1 A Collector current I C 1.5 Peak collector current, t 10 ms I p CM 100 mA Base current I B 200 Peak base current I BM 2 W Total power dissipation- P tot T 120C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 15 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-10-13 2