BCP69-25
PNP Silicon AF Transistor
For general AF applications
4
3
High collector current
2
1
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter Symbol Value Unit
20 V
Collector-emitter voltage V
CEO
25
Collector-emitter voltage V
CES
25
Collector-base voltage V
CBO
5
Emitter-base voltage V
EBO
1 A
Collector current I
C
2
Peak collector current, t 10 ms I
p CM
100 mA
Base current I
B
200
Peak base current I
BM
3 W
Total power dissipation- P
tot
T 114 C
S
150 C
Junction temperature T
j
Storage temperature T -65 ... 150
stg
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R 12
thJS
1 2011-09-19BCP69-25
Electrical Characteristics at T = 25C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
20 - - V
Collector-emitter breakdown voltage V
(BR)CEO
I = 30 mA, I = 0
C B
Collector-base breakdown voltage V 25 - -
(BR)CBO
I = 10 A, I = 0
C E
Collector-emitter breakdown voltage V 25 - -
(BR)CES
I = 10 A, V = 0
C BE
Emitter-base breakdown voltage V 5 - -
(BR)EBO
I = 10 A, I = 0
E C
Collector-base cutoff current I A
CBO
V = 25 V, I = 0
- - 0.1
CB E
V = 25 V, I = 0 , T = 150 C - - 100
CB E A
2)
-
DC current gain h
FE
I = 5 mA, V = 10 V 50 - -
C CE
I = 500 mA, V = 1 V, BCP69-16 100 160 250
C CE
I = 500 mA, V = 1 V, BCP69-25 160 250 375
C CE
I = 1 A, V = 1 V 60 - -
C CE
2)
Collector-emitter saturation voltage V - - 0.5 V
CEsat
I = 1 A, I = 100 mA
C B
2)
Base-emitter voltage V
BE(ON)
I = 5 mA, V = 10 V - 0.6 -
C CE
I = 1 A, V = 1 V - - 1
C CE
AC Characteristics
- 100 - MHz
Transition frequency f
T
I = 100 mA, V = 5 V, f = 100 MHz
C CE
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2
Pulse test: t < 300s; D < 2%
2 2011-09-19