BCV28, BCV48 PNP Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 2 High current gain Complementary types: BCV29, BCV49 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCV28 30 BCV48 60 Collector-base voltage V CBO BCV28 40 BCV48 80 10 Emitter-base voltage V EBO 500 mA Collector current I C 800 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 1 W Total power dissipation- P tot T 130 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-10-05 1BCV28, BCV48 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 20 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V (BR)CEO I = 10 mA, I = 0 , BCV28 30 - - C B I = 10 mA, I = 0 , BCV48 60 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BCV28 40 - - C E I = 100 A, I = 0 , BCV48 80 - - C E Emitter-base breakdown voltage V 10 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 30 V, I = 0 , BCV28 - - 0.1 CB E V = 60 V, I = 0 , BCV48 - - 0.1 CB E V = 30 V, I = 0 , T 150 C, BCV28 - - 10 CB E A V = 60 V, I = 0 , T 150 C, BCV48 - - 10 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 1) - DC current gain h FE I = 10 A, V = 1 V, BCV28 4000 - - C CE I = 10 A, V = 1 V, BCV48 2000 - - C CE I = 10 mA, V = 5 V, BCV28 10000 - - C CE I = 10 mA, V = 5 V, BCV48 4000 - - C CE I = 100 mA, V = 5 V, BCV28 20000 - - C CE I = 100 mA, V = 5 V, BCV48 10000 - - C CE I = 0.5 A, V = 5 V, BCV28 4000 - - C CE I = 0.5 A, V = 5 V, BCV48 2000 - - C CE 1) Collector-emitter saturation voltage V - - 1 V CEsat I = 100 mA, I = 0.1 mA C B 1) Base emitter saturation voltage V - - 1.5 BEsat I = 100 mA, I = 0.1 mA C B 2011-10-05 2