X-On Electronics has gained recognition as a prominent supplier of BCV61CE6327HTSA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCV61CE6327HTSA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCV61CE6327HTSA1 Infineon

BCV61CE6327HTSA1 electronic component of Infineon
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Part No.BCV61CE6327HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
Datasheet: BCV61CE6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3344 ea
Line Total: USD 0.33 
Availability - 2639
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3003
10 : USD 0.2315
100 : USD 0.1438
500 : USD 0.1147
1000 : USD 0.0831

8715
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3115
10 : USD 0.3106
25 : USD 0.3095
100 : USD 0.3085
250 : USD 0.3074
500 : USD 0.3064
1000 : USD 0.3054
3000 : USD 0.3044
6000 : USD 0.3033

2639
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3344
10 : USD 0.2299
100 : USD 0.1254
1000 : USD 0.1144
3000 : USD 0.1056
9000 : USD 0.0759
24000 : USD 0.0737
45000 : USD 0.0715

8715
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 96
Multiples : 1
96 : USD 0.3095
100 : USD 0.3085
250 : USD 0.3074
500 : USD 0.3064
1000 : USD 0.3054
3000 : USD 0.3044
6000 : USD 0.3033

1050510
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 4831
Multiples : 1
4831 : USD 0.1009

8730
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 9000
Multiples : 9000
9000 : USD 0.1005

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 90
Multiples : 1
90 : USD 0.0831

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCV61CE6327HTSA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV61CE6327HTSA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCV61 NPN Silicon Double Transistor To be used as a current mirror 3 Good thermal coupling and V matching BE 2 4 High current gain 1 Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration Package BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage V CEO (transistor T1) 30 Collector-base voltage (open emitter) V CBO (transistor T1) 6 Emitter-base voltage V EBS 100 mA DC collector current I C 200 Peak collector current, t < 10 ms I p CM 200 Base peak current (transistor T1) I BM 300 mW Total power dissipation, T = 99 C P S tot 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance 1) Junction - soldering point R 170 K/W thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-10-13 1BCV61 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1 30 - - V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 C B 30 - - Collector-base breakdown voltage V (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C - - 15 nA Collector cutoff current I CBO V = 30 V, I = 0 CB E - - 5 A Collector cutoff current I CBO V = 30 V, I = 0 , T = 150 C CB E A 1) 100 - - DC current gain h - FE I = 0.1 mA, V = 5 V C CE 1) DC current gain h FE I = 2 mA, V = 5 V, BCV61B 200 290 450 C CE I = 2 mA, V = 5 V, BCV61C 420 520 800 C CE 1) mV Collector-emitter saturation voltage V CEsat I = 10 mA, I = 0.5 mA - 90 250 C B I = 100 mA, I = 5 mA - 200 600 C B 1) Base-emitter saturation voltage V BEsat I = 10 mA, I = 0.5 mA - 700 - C B I = 100 mA, I = 5 mA - 900 - C B 1) Base-emitter voltage V BE(ON) I = 2 mA, V = 5 V 580 660 700 C CE I = 10 mA, V = 5 V - - 770 C CE 1 Puls test: t 300 s, D = 2% 2011-10-13 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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