BCW66K NPN Silicon AF Transistors For general AF applications 2 3 High current gain 1 Low collector-emitter saturation voltage Complementary type: BCW68 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66KF EFs 1=B 2=E 3=C SOT23 BCW66KG EGs 1=B 2=E 3=C SOT23 BCW66KH EHs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit 45 V Collector-emitter voltage V CEO 75 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 800 mA Collector current I C 1 A Peak collector current, t 10 ms I p CM 100 mA Base current I B 200 Peak base current I BM 500 mW Total power dissipation- P tot T 115 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 70 thJS 2011-09-30 1BCW66K Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 45 - - Collector-emitter breakdown voltage V V (BR)CEO I = 10 mA, I = 0 C B Collector-base breakdown voltage V 75 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 45 V, I = 0 - - 0.02 CB E V = 45 V, I = 0 , T = 150 C - - 20 CB E A - - 20 nA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 2) - DC current gain h FE I = 100 A - 10 mA, V = 1 V, hFE-grp.F 75 - - C CE I = 100 A - 10 mA, V = 1 V, hFE-grp.G 110 - - C CE I = 100 A - 10 mA, V = 1 V, hFE-grp.H 180 - - C CE I = 100 mA, V = 1 V, hFE-grp.F 100 160 250 C CE I = 100 mA, V = 1 V, hFE-grp.G 160 250 400 C CE I = 100 mA, V = 1 V, hFE-grp.H 250 350 630 C CE I = 500 mA, V = 1 V, hFE-grp.F, G, H 40 - - C CE 2) Collector-emitter saturation voltage V V CEsat I = 100 mA, I = 10 mA - - 0.3 C B I = 500 mA, I = 50 mA - - 0.45 C B 2) Base emitter saturation voltage V BEsat I = 100 mA, I = 10 mA - - 1.25 C B I = 500 mA, I = 50 mA - - 1.25 C B 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2011-09-30 2