BCX41 NPN Silicon AF and Switching Transistor For general AF applications 2 3 High breakdown voltage 1 Low collector-emitter saturation voltage Complementary type: BCX42 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCX41 EKs SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 125 V Collector-emitter voltage V CEO 125 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 800 mA Collector current I C 1 A Peak collector current, t 10 ms I p CM 100 mA Base current I B Peak base current I 200 BM 330 mW Total power dissipation P tot T 79 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 215 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-10-04 1BCX41 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 125 - - Collector-emitter breakdown voltage V V (BR)CEO I = 10 mA, I = 0 C B Collector-base breakdown voltage V 125 - - (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 100 V, I = 0 - - 0.1 CB E V = 100 V, I = 0 , T = 150 C - - 20 CB E A Collector-emitter cutoff current I CEO V = 100 V, T = 85 C - - 10 CE A V = 100 V, T = 125 C - - 75 CE A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 1) - DC current gain h FE I = 100 A, V = 1 V 25 - - C CE I = 100 mA, V = 1 V 63 - - C CE I = 200 mA, V = 1 V 40 - - C CE 1) Collector-emitter saturation voltage V - - 0.9 V CEsat I = 300 mA, I = 30 mA C B 1) Base emitter saturation voltage V - - 1.4 BEsat I = 300 mA, I = 30 mA C B AC Characteristics - 100 - MHz Transition frequency f T I = 20 mA, V = 5 V, f = 20 MHz C CE - 12 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2011-10-04 2