BCX5316H6327XTSA1 Infineon

BCX51...-BCX53... PNP Silicon AF Transistors 1 For AF driver and output stages 2 High collector current 3 2 Low collector-emitter saturation voltage Complementary types: BCX54...BCX56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCX51 AA 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE 1=B 2=C 3=E SOT89 BCX52-16 AM 1=B 2=C 3=E SOT89 BCX53 AH 1=B 2=C 3=E SOT89 BCX53-10 AK 1=B 2=C 3=E SOT89 BCX53-16 AL 1=B 2=C 3=E SOT89 2011-07-29 1BCX51...-BCX53... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCX51 45 BCX52 60 BCX53 80 Collector-base voltage V CBO BCX51 45 BCX52 60 BCX53 100 5 Emitter-base voltage V EBO 1 A Collector current I C Peak collector current, t 10 ms I 1.5 p CM 100 mA Base current I B Peak base current I 200 BM 2 W Total power dissipation P tot T 120 C S Junction temperature T 150 C j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 15 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-07-29 2