BCX70HE6327HTSA1 Infineon

BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications 2 3 High current gain 1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW60B ABs 1=B 2=E 3=C SOT23 BCW60C ACs 1=B 2=E 3=C SOT23 BCW60D ADs 1=B 2=E 3=C SOT23 BCW60FF AFs 1=B 2=E 3=C SOT23 BCX70G AGs 1=B 2=E 3=C SOT23 BCX70H AHs 1=B 2=E 3=C SOT23 BCX70J AJs 1=B 2=E 3=C SOT23 BCX70K AKs 1=B 2=E 3=C SOT23 1 Pb-containing package may be available upon special request 1 2007-04-20BCW60, BCX70 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCW60, ...60FF 32 BCX70 45 Collector-base voltage V CBO BCW60, ...60FF 32 BCX70 45 6 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current I CM 200 Peak base current I BM 330 mW Total power dissipation P tot T 71 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 240 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20