BDP947, BDP949 Silicon NPN Transistors For AF driver and output stages 4 3 High collector current 2 High current gain 1 Low collector-emitter saturation voltage Complementary types: BDP948, BDP950 (PNP) Type Marking Pin Configuration Package BDP947 BDP947 1=B 2=C 3=E 4=C - - SOT223 BDP949 BDP949 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BDP947 45 BDP949 60 Collector-base voltage V CBO BDP947 45 BDP949 60 5 Emitter-base voltage V EBO 3 A Collector current I C 5 Peak collector current I CM 200 mA Base current I B 500 Peak base current I BM 3 W Total power dissipation- P tot T 99 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 17 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2006-01-24BDP947, BDP949 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 , BDP947 45 - - C B I = 10 mA, I = 0 , BDP949 60 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BDP947 45 - - C E I = 100 A, I = 0 , BDP949 60 - - C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 45 V, I = 0 - - 0.1 CB E V = 45 V, I = 0 , T = 150 C - - 20 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 1) - DC current gain h FE I = 10 mA, V = 5 V 25 - - C CE I = 500 mA, V = 1 V 85 - 475 C CE I = 2 A, V = 2 V 50 - - C CE 1) Collector-emitter saturation voltage V - - 0.5 V CEsat I = 2 A, I = 0.2 A C B 1) Base emitter saturation voltage V - - 1.3 BEsat I = 2 A, I = 0.2 A C B AC Characteristics - 100 - MHz Transition frequency f T I = 50 mA, V = 10 V, f = 100 MHz C CE - 25 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2 2006-01-24