X-On Electronics has gained recognition as a prominent supplier of BFN 26 E6327 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BFN 26 E6327 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BFN 26 E6327 Infineon

BFN 26 E6327 electronic component of Infineon
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Part No.BFN 26 E6327
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Infineon Technologies Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
Datasheet: BFN 26 E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 21305
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
21305
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2739
100 : USD 0.1551
1000 : USD 0.0781
3000 : USD 0.0682
9000 : USD 0.0539
24000 : USD 0.0506
45000 : USD 0.0495

3861
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 10
Multiples : 1
10 : USD 0.182
50 : USD 0.1134
189 : USD 0.091
518 : USD 0.0854
3000 : USD 0.0826

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFN 26 E6327 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFN 26 E6327 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BFN24, BFN26 NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BFN24 FHs 1=B 2=E 3=C SOT23 BFN26 FJs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BFN24 250 BFN26 300 Collector-base voltage V CBO BFN24 250 BFN26 300 6 Emitter-base voltage V EBO 200 mA Collector current I C 500 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 360 mW Total power dissipation- P tot T 74 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-12-19 1BFN24, BFN26 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 , BFN24 250 - - C B I = 1 mA, I = 0 , BFN26 300 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BFN24 250 - - C E I = 100 A, I = 0 , BFN26 300 - - C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 100 A, I = 0 E C Collector-base cutoff current I A CBO V = 200 V, I = 0 , BFN24 - - 0.1 CB E V = 250 V, I = 0 , BFN26 - - 0.1 CB E V = 200 V, I = 0 , T = 150 C, BFN24 - - 20 CB E A V = 250 V, I = 0 , T = 150 C, BFN26 - - 20 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 2) - DC current gain h FE I = 1 mA, V = 10 V 25 - - C CE I = 10 mA, V = 10 V 40 - - C CE I = 30 mA, V = 10 V, BFN24 40 - - C CE I = 30 mA, V = 10 V, BFN26 30 - - C CE 2) Collector-emitter saturation voltage V V CEsat I = 20 mA, I = 2 mA, BFN24 - - 0.4 C B I = 20 mA, I = 2 mA, BFN26 - - 0.5 C B 2) Base emitter saturation voltage V - - 0.9 BEsat I = 20 mA, I = 2 mA C B 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2011-12-19 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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