X-On Electronics has gained recognition as a prominent supplier of BFP760H6327 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BFP760H6327 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BFP760H6327 Infineon

BFP760H6327 electronic component of Infineon
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Part No.BFP760H6327
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 4V; 70mA; 240mW; SOT343
Datasheet: BFP760H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5362 ea
Line Total: USD 0.54 
Availability - 876
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
876
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5362
10 : USD 0.4307
30 : USD 0.3868
100 : USD 0.329
500 : USD 0.305
1000 : USD 0.2892

   
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Kind Of Transistor
Type Of Transistor
Collector-Emitter Voltage
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Power Dissipation
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We are delighted to provide the BFP760H6327 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP760H6327 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BFP760 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2013-08-05 RF & Protection Devices Edition 2013-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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