BFQ 19S H6327 Infineon

BFQ19S Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 2 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFQ19S FG SOT89 1 = B 2 = C 3 = E Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 15 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 3 Emitter-base voltage V EBO 120 mA Collector current I C 12 Base current I B 1) 1 W Total power dissipation P tot T 85C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 65 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2014-04-03 1BFQ19S Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 15 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 10 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 100 A Emitter-base cutoff current I EBO V = 2 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 70 mA, V = 8 V, pulse measured C CE 2014-04-03 2