BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type V I Package Ordering Code CE C BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 1200 V CE Collector-gate voltage V CGR R = 20 k 1200 GE Gate-emitter voltage V 20 GE DC collector current I A C T = 25 C 150 C T = 80 C 100 C Pulsed collector current, t = 1 ms I p Cpuls T = 25 C 300 C T = 80 C 200 C Power dissipation per IGBT P W tot T = 25 C 800 C Chip temperature T + 150 C j Storage temperature T -40 ... + 125 stg Thermal resistance, chip case R 0.16 K/W thJC Diode thermal resistance, chip case R 0.3 thJC D Insulation test voltage, t = 1min. V 2500 Vac is Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 1 Oct-21-1997BSM 100 GB 120 DN2 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V V GE(th) V = V I = 4 mA 4.5 5.5 6.5 GE CE, C Collector-emitter saturation voltage V CE(sat) V = 15 V, I = 100 A, T = 25 C - 2.5 3 GE C j V = 15 V, I = 100 A, T = 125 C - 3.1 3.7 GE C j Zero gate voltage collector current I mA CES V = 1200 V, V = 0 V, T = 25 C - 1.5 2 CE GE j V = 1200 V, V = 0 V, T = 125 C - 6 - CE GE j Gate-emitter leakage current I nA GES V = 20 V, V = 0 V - - 200 GE CE AC Characteristics Transconductance g S fs V = 20 V, I = 100 A 54 - - CE C Input capacitance C nF iss V = 25 V, V = 0 V, f = 1 MHz - 6.5 - CE GE Output capacitance C oss V = 25 V, V = 0 V, f = 1 MHz - 1 - CE GE Reverse transfer capacitance C rss V = 25 V, V = 0 V, f = 1 MHz - 0.5 - CE GE 2 Oct-21-1997