BSM 15 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type V I Package Ordering Code CE C BSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67 BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 1200 V CE Collector-gate voltage V CGR R = 20 k 1200 GE Gate-emitter voltage V 20 GE DC collector current I A C T = 25 C 25 C T = 80 C 15 C Pulsed collector current, t = 1 ms I p Cpuls T = 25 C 50 C T = 80 C 30 C Power dissipation per IGBT P W tot T = 25 C 145 C Chip temperature T + 150 C j Storage temperature T -40 ... + 125 stg Thermal resistance, chip case R 0.86 K/W thJC Diode thermal resistance, chip case R 1.5 thJC D Insulation test voltage, t = 1min. V 2500 Vac is Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 1 2006-01-31BSM 15 GD 120 DN2 E3224 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V V GE(th) V = V I = 0.6 mA 4.5 5.5 6.5 GE CE, C Collector-emitter saturation voltage V CE(sat) V = 15 V, I = 15 A, T = 25 C - 2.5 3 GE C j V = 15 V, I = 15 A, T = 125 C - 3.1 3.7 GE C j Zero gate voltage collector current I mA CES V = 1200 V, V = 0 V, T = 25 C - 0.3 0.5 CE GE j V = 1200 V, V = 0 V, T = 125 C - 1.2 - CE GE j Gate-emitter leakage current I nA GES V = 20 V, V = 0 V - - 150 GE CE AC Characteristics Transconductance g S fs V = 20 V, I = 15 A 5.5 - - CE C Input capacitance C pF iss V = 25 V, V = 0 V, f = 1 MHz - 1000 - CE GE Output capacitance C oss V = 25 V, V = 0 V, f = 1 MHz - 150 - CE GE Reverse transfer capacitance C rss V = 25 V, V = 0 V, f = 1 MHz - 70 - CE GE 2 2006-01-31