Technische Information / Technical Information IGBT-Module BSM 200 GA 170 DLC IGBT-Modules Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung V 1700 V CES collector-emitter voltage T = 80 C I 200 A Kollektor-Dauergleichstrom C C,nom. DC-collector current T = 25 C I 400 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T =80C I 400 A P C CRM repetitive peak collctor current Gesamt-Verlustleistung T =25C, Transistor P 1920 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Dauergleichstrom I 200 A F DC forward current Periodischer Spitzenstrom I tp = 1 ms 400 A FRM repetitive peak forw. current Grenzlastintegral der Diode 2 2 V = 0V, t = 10ms, T = 125C 11.000 R p Vj I t A s 2 I t - value, Diode Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 3,4 kV ISOL insulation test voltage Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 200A, V = 15V, T = 25C V - 2,6 3,2 V Kollektor-Emitter Sttigungsspannung C GE vj CE sat collector-emitter saturation voltage I = 200A, V = 15V, T = 125C - 3,1 3,6 V C GE vj Gate-Schwellenspannung I = 10mA, V = V , T = 25C V C CE GE vj GE(th) 4,5 5,5 6,5 V gate threshold voltage Gateladung V = -15V ... +15V Q - 2,4 - C GE G gate charge Eingangskapazitt f = 1MHz,T = 25C,V = 25V, V = 0V C - 15 - nF vj CE GE ies input capacitance Rckwirkungskapazitt f = 1MHz,T = 25C,V = 25V, V = 0V C - 0,7 - nF vj CE GE res reverse transfer capacitance V = 1700V, V = 0V, T = 25C I - 0,1 0,4 mA Kollektor-Emitter Reststrom CE GE vj CES collector-emitter cut-off current V = 1700V, V = 0V, T = 125C -6 mA CE GE vj Gate-Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 200 nA CE GE vj GES gate-emitter leakage current prepared by: Regine Mallwitz date of publication: 28.11.2000 approved by: Christoph Lbke 28.11.2000 revision: 2 (Series) 1(8) BSM200GA170DLCTechnische Information / Technical Information IGBT-Module BSM 200 GA 170 DLC IGBT-Modules Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 200A, V = 900V C CE Einschaltverzgerungszeit (ind. Last) turn on delay time (inductive load) V = 15V, R = 7,5W , T = 25C t - 0,1 - s GE G vj d,on V = 15V, R = 7,5W , T = 125C - 0,1 - s GE G vj I = 200A, V = 900V Anstiegszeit (induktive Last) C CE rise time (inductive load) V = 15V, R = 7,5W , T = 25C t - 0,1 - s GE G vj r V = 15V, R = 7,5W , T = 125C - 0,1 - s GE G vj I = 200A, V = 900V Abschaltverzgerungszeit (ind. Last) C CE turn off delay time (inductive load) V = 15V, R = 7,5W , T = 25C t - 0,8 - s GE G vj d,off V = 15V, R = 7,5W , T = 125C - 0,9 - s GE G vj I = 200A, V = 900V C CE Fallzeit (induktive Last) fall time (inductive load) V = 15V, R = 7,5W , T = 25C t - 0,03 - s GE G vj f V = 15V, R = 7,5W , T = 125C - 0,03 - s GE G vj I = 200A, V = 900V, V = 15V C CE GE Einschaltverlustenergie pro Puls turn-on energy loss per pulse R = 7,5W , T = 125C, L = 60nH E - 90 - mWs G vj S on I = 200A, V = 900V, V = 15V C CE GE Abschaltverlustenergie pro Puls turn-off energy loss per pulse R = 7,5W , T = 125C, L = 60nH E - 65 - mWs G vj S off t 10sec, V 15V, R = 7,5W Kurzschluverhalten P GE G SC Data T 125C, V =1000V, V =V -L dI/dt I - 800 - A Vj CC CEmax CES sCE SC Modulinduktivitt L - 15 - nH sCE stray inductance module Modulleitungswiderstand, Anschlsse - Chip pro Zweig / per arm R - 0,5 - mW CC+EE module lead resistance, terminals - chip Charakteristische Werte / Characteristic values min. typ. max. Diode / Diode I = 200A, V = 0V, T = 25C V - 2,1 2,5 V F GE vj F Durchlaspannung forward voltage I = 200A, V = 0V, T = 125C - 2,1 2,5 V F GE vj I = 200A, - di /dt = 2300A/sec F F Rckstromspitze peak reverse recovery current V = 900V, VGE = -10V, T = 25C I - 160 - A R vj RM V = 900V, VGE = -10V, T = 125C - 220 - A R vj I = 200A, - di /dt = 2300A/sec F F Sperrverzgerungsladung recovered charge V = 900V, VGE = -10V, T = 25C Q - 60 - As R vj r V = 900V, VGE = -10V, T = 125C - 105 - As R vj I = 200A, - di /dt = 2300A/sec F F Abschaltenergie pro Puls reverse recovery energy V = 900V, VGE = -10V, T = 25C E - 25 - mWs R vj rec V = 900V, VGE = -10V, T = 125C - 50 - mWs R vj 2(8) BSM200GA170DLC