Technische Information / Technical Information IGBT-Module BSM50GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rckw. Spitzensperrspannung V 1600 V RRM repetitive peak reverse voltage Durchlastrom Grenzeffektivwert I 40 A FRMSM RMS forward current per chip Dauergleichstrom T = 80C I 50 A C d DC forward current t = 10 ms, T = 25C I Stostrom Grenzwert P vj FSM 500 A surge forward current t = 10 ms, T = 150C 400 A P vj 2 2 Grenzlastintegral t = 10 ms, T = 25C 1250 P vj I t A s 2 2 t = 10 ms, T = 150C 800 I t - value P vj A s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung V 1200 V CES collector-emitter voltage Kollektor-Dauergleichstrom Tc = 80 C I 50 A C,nom. DC-collector current T = 25 C I 80 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = I 80 C 100 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 360 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom Tc = 80 C I 50 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 100 A P FRM repetitive peak forw. current Grenzlastintegral 2 2 V = 0V, t = 10ms, T = 125C 1.200 R p vj I t A s 2 I t - value Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung V 1200 V CES collector-emitter voltage T = 80 C I Kollektor-Dauergleichstrom 25 A C C,nom. DC-collector current T = 25 C I C C 45 A Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80C I 50 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 230 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom I 15 A Tc = 80 C F DC forward current Periodischer Spitzenstrom t = 1 ms I 30 A P FRM repetitive peak forw. current prepared by: Andreas Schulz date of publication:12.06.2003 approved by: Robert Severin revision: 6 1(11) DB-PIM-10.xlsTechnische Information / Technical Information IGBT-Module BSM50GP120 IGBT-Modules Modul Isolation/ Module Isolation Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Diode Gleichrichter/ Diode Rectifier Durchlaspannung T = 150C, I = 50 A V - 1,05 - V vj F F forward voltage Schleusenspannung T = 150C V - - 0,8 V vj (TO) threshold voltage Ersatzwiderstand T = 150C r - - 6,5 m vj T slope resistance Sperrstrom T = 150C, V = 1600 V I -3 - mA vj R R reverse current Modul Leitungswiderstand, Anschlsse-Chip T = 25C R - 4 - m C AA +CC lead resistance, terminals-chip min. typ. max. Transistor Wechselrichter/ Transistor Inverter V = 15V, T = 25C, I = 50 A V - 2,2 2,55 V Kollektor-Emitter Sttigungsspannung GE vj C CE sat collector-emitter saturation voltage V = 15V, T = 125C, I = 50 A - 2,5 - V GE vj C Gate-Schwellenspannung V = V , T = 25C, I = 2 mA V 4,5 5,5 6,5 V CE GE vj C GE(TO) gate threshold voltage f = 1MHz, T = 25C Eingangskapazitt vj C - 3,3 - nF ies input capacitance V = 25 V, V = 0 V CE GE V = 0V, T = 25C, V = I Kollektor-Emitter Reststrom 1200 V - 3,0 500 A GE vj CE CES collector-emitter cut-off current V = 0V, T =125C, V = 1200 V - 4,0 - mA GE vj CE Gate-Emitter Reststrom V = 0V, V =20V, T =25C I - - 300 nA CE GE vj GES gate-emitter leakage current I = I , V = 600 V Einschaltverzgerungszeit (ind. Last) C Nenn CC turn on delay time (inductive load) V = 15V, T = 25C, R = 15 Ohm t -65 - ns GE vj G d,on V = 15V, T = 125C, R = 15 Ohm - 60 - ns GE vj G I = I , V = Anstiegszeit (induktive Last) 600 V C Nenn CC rise time (inductive load) V = 15V, T = 25C, R = 15 Ohm t -45 - ns GE vj G r V = 15V, T = 125C, R = 15 Ohm - 45 - ns GE vj G I = I , V = Abschaltverzgerungszeit (ind. Last) 600 V C Nenn CC turn off delay time (inductive load) V = 15V, T = 25C, R = t 15 Ohm - 380 - ns GE vj G d,off V = 15V, T = 125C, R = 15 Ohm - 400 - ns GE vj G Fallzeit (induktive Last) I = I , V = 600 V C Nenn CC fall time (inductive load) = 15V, T = 25C, R = t V 15 Ohm -10 - ns GE vj G f V = 15V, T = 125C, R = 15 Ohm - 30 - ns GE vj G I = I , V = 600 V Einschaltverlustenergie pro Puls C Nenn CC turn-on energy loss per pulse V = 15V, T = 125C, R = 15 Ohm E - 6,5 - mWs GE vj G on L = 50 nH S I = I , V = Abschaltverlustenergie pro Puls 600 V C Nenn CC turn-off energy loss per pulse V = 15V, T = 125C, R = E GE vj G 15 Ohm off - 6 - mWs L = 50 nH S Kurzschluverhalten t 10s, V 15V, R = 15 Ohm P GE G SC Data I T 125C, V = 720 V - 300 - A vj CC SC dI/dt = 4000 A/s 2(11) DB-PIM-10.xls