BSM 75 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate R = 22 Ohm G on,min Type V I Package Ordering Code CE C BSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 1700 V CE Collector-gate voltage V CGR R = 20 k 1700 GE Gate-emitter voltage V 20 GE DC collector current I A C T = 25 C 110 C T = 80 C 75 C Pulsed collector current, t = 1 ms I p Cpuls T = 25 C 220 C T = 80 C 150 C Power dissipation per IGBT P W tot T = 25 C 625 C Chip temperature T + 150 C j Storage temperature T -40 ... + 125 stg Thermal resistance, chip case R 0.2 K/W thJC Diode thermal resistance, chip case R 0.63 thJC D Insulation test voltage, t = 1min. V 4000 Vac is Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 1 Oct-27-1997BSM 75 GB 170 DN2 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V V GE(th) V = V I = 5 mA 4.8 5.5 6.2 GE CE, C Collector-emitter saturation voltage V CE(sat) V = 15 V, I = 75 A, T = 25 C - 3.4 3.9 GE C j V = 15 V, I = 75 A, T = 125 C - 4.6 5.3 GE C j Zero gate voltage collector current I mA CES V = 1700 V, V = 0 V, T = 25 C - 0.5 0.75 CE GE j V = 1700 V, V = 0 V, T = 125 C - 2 - CE GE j Gate-emitter leakage current I nA GES V = 20 V, V = 0 V - - 400 GE CE AC Characteristics Transconductance g S fs V = 20 V, I = 75 A 27 - - CE C Input capacitance C nF iss V = 25 V, V = 0 V, f = 1 MHz - 11 - CE GE Output capacitance C oss V = 25 V, V = 0 V, f = 1 MHz - 1 - CE GE Reverse transfer capacitance C rss V = 25 V, V = 0 V, f = 1 MHz - 0.28 - CE GE 2 Oct-27-1997