Technische Information / Technical Information IGBT-Module BSM75GD120DLC IGBT-Modules Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung V 1200 V CES collector-emitter voltage T = 80 C I 75 A C C,nom. Kollektor-Dauergleichstrom DC-collector current T = 25 C I 125 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80C I P C CRM 150 A repetitive peak collector current Gesamt-Verlustleistung T =25C, Transistor P 500 W C tot total power dissipation Gate-Emitter-Spitzenspannung V GES +/- 20V V gate-emitter peak voltage Dauergleichstrom I 75 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 150 A P FRM repetitive peak forw. current Grenzlastintegral der Diode 2 2 V = 0V, t = 10ms, T = 125C 1,19 R p Vj I t kA s 2 I t - value, Diode Isolations-Prfspannung V RMS, f = 50 Hz, t = 1 min. 2,5 kV ISOL insulation test voltage Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 75A, V = 15V, T = 25C V - 2,1 2,6 V Kollektor-Emitter Sttigungsspannung C GE vj CE sat collector-emitter saturation voltage I = 75A, V = 15V, T = 125C - 2,4 2,9 V C GE vj Gate-Schwellenspannung I = 3mA, V = V , T = 25C V 4,5 5,5 6,5 V C CE GE vj GE(th) gate threshold voltage Gateladung V = -15V...+15V Q - 0,8 - C GE G gate charge Eingangskapazitt f = 1MHz,T = 25C,V = 25V, V = 0V C - 5,1 - nF vj CE GE ies input capacitance Rckwirkungskapazitt f = 1MHz,T = 25C,V = 25V, V = 0V C - 0,33 - nF vj CE GE res reverse transfer capacitance V = 1200V, V = 0V, T = 25C I -3 92 A Kollektor-Emitter Reststrom CE GE vj CES collector-emitter cut-off current V = 1200V, V = 0V, T = 125C - 300 - A CE GE vj Gate-Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate-emitter leakage current prepared by: Mark Mnzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) Seriendatenblatt BSM75GD120DLC.xlsTechnische Information / Technical Information IGBT-Module BSM75GD120DLC IGBT-Modules Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 75A, V = 600V C CC Einschaltverzgerungszeit (ind. Last) turn on delay time (inductive load) V = 15V, R = 10 , T = 25C t - 0,05 - s GE G vj d,on V = 15V, R = 10 , T = 125C - 0,06 - s GE G vj I = 75A, V = 600V C CC Anstiegszeit (induktive Last) rise time (inductive load) V = 15V, R = 10 , T = 25C t - 0,05 - s GE G vj r V = 15V, R = 10 , T = 125C - 0,05 - s GE G vj I = 75A, V = 600V C CC Abschaltverzgerungszeit (ind. Last) turn off delay time (inductive load) V = 15V, R = 10 , T = 25C t - 0,3 - s GE G vj d,off V = 15V, R = 10 , T = 125C - 0,35 - s GE G vj I = 75A, V = 600V C CC Fallzeit (induktive Last) fall time (inductive load) V = 15V, R = 10 , T = 25C t - 0,05 - s GE G vj f V = 15V, R = 10 , T = 125C - 0,07 - s GE G vj I = 75A, V = 600V, V = 15V C CC GE Einschaltverlustenergie pro Puls turn-on energy loss per pulse R = 10 , T = 125C, L = 60nH E - 7,5 - mWs G vj S on I = 75A, V = 600V, V = 15V C CC GE Abschaltverlustenergie pro Puls turn-off energy loss per pulse R = 10 , T = 125C, L = 60nH E - 9 - mWs G vj S off t 10sec, V 15V, R = 10 P GE G Kurzschluverhalten SC Data T 125C, V =900V, V =V -L dI/dt I - 540 - A Vj CC CEmax CES sCE SC Modulinduktivitt L - 25 - nH sCE stray inductance module Modul Leitungswiderstand, Anschlsse Chip T =25C R - 1,8 - m C CC+EE module lead resistance, terminals chip Charakteristische Werte / Characteristic values min. typ. max. Diode / Diode I = 75A, V = 0V, T = 25C V - 1,8 2,3 V Durchlaspannung F GE vj F forward voltage I = 75A, V = 0V, T = 125C - 1,7 2,2 V F GE vj I = 75A, - di /dt = 2000A/sec Rckstromspitze F F peak reverse recovery current V = 600V, VGE = -15V, T = 25C I -85 - A R vj RM V = 600V, VGE = -15V, T = 125C - 105 - A R vj I = 75A, - di /dt = 2000A/sec Sperrverzgerungsladung F F recovered charge V = 600V, VGE = -15V, T = 25C Q - 9 - As R vj r V = 600V, VGE = -15V, T = 125C - 16,5 - As R vj I = 75A, - di /dt = 2000A/sec F F Abschaltenergie pro Puls reverse recovery energy V = 600V, VGE = -15V, T = 25C E R vj rec - 3 - mWs V = 600V, VGE = -15V, T = 125C - 6,2 - mWs R vj 2(8) Seriendatenblatt BSM75GD120DLC.xls