X-On Electronics has gained recognition as a prominent supplier of BSS214NW H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS214NW H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS214NW H6327 Infineon

BSS214NW H6327 electronic component of Infineon
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Part No.BSS214NW H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-323-3
Datasheet: BSS214NW H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.429 ea
Line Total: USD 0.43 
Availability - 12983
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1429
Multiples : 1
1429 : USD 0.0848

2706
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1385
50 : USD 0.1153
150 : USD 0.1036
500 : USD 0.0948
3000 : USD 0.0786
6000 : USD 0.0752

12983
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.429
10 : USD 0.3201
100 : USD 0.1815
1000 : USD 0.0913
3000 : USD 0.0792
9000 : USD 0.0638
24000 : USD 0.0594
45000 : USD 0.0572

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Rohs Mouser
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSS214NW H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS214NW H6327 and other electronic components in the MOSFETs category and beyond.

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BSS214NW OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT323 100% lead-free RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS214NW PG-SOT323 H6327: 3000 pcs/ reel X5s Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 1.5 A D A T =70 C 1.2 A I T =25 C Pulsed drain current 6 D,pulse A Avalanche energy, single pulse E I =1.5 A, R =25 3.7 mJ AS D GS I =1.5 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 12 V GS 1) P T =25 C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.2 page 1 2011-07-13BSS214NW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 V, I = 250 A Drain-source breakdown voltage 20 - - V (BR)DSS GS D Gate threshold voltage V V =0 V, I =3.7 A 0.7 0.95 1.2 GS(th) DS D V =20 V, V =0 V, DS GS I Drain-source leakage current -- 1 A DSS T =25 C j V =20 V, V =0 V, DS GS - - 100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS R V =2.5 V, I =0.7 A Drain-source on-state resistance - 171 250 m DS(on) GS D V =4.5 V, I =1.5 A - 106 140 GS D V >2 I R , DS D DS(on)max g Transconductance -4 - S fs I =1.2 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB. Rev 2.2 page 2 2011-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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