X-On Electronics has gained recognition as a prominent supplier of BYM600A170DN2 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. BYM600A170DN2 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

BYM600A170DN2 Infineon

BYM600A170DN2 electronic component of Infineon
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Part No.BYM600A170DN2
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules 1700V 600A FDIODE
Datasheet: BYM600A170DN2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the BYM600A170DN2 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BYM600A170DN2 and other electronic components in the IGBT Modules category and beyond.

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BYM 600 A 170 DN2 Diode Power Module Inside fast free-wheeling diode Package with insulated metal base plate Diode especially for brake choppers matched with BSM 300 GA 170 DN 2 E 3166 Type V I Package Ordering Code R25 FDC BYM 600 A 170 DN2 1700V 600A SINGLE DIODE 1 C67070-A2902-A67 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage V V R25 T = 25 C 1700 j DC current I A FDC T = 25 C 600 C T = 80 C 400 C Pulsed diode current, t = 1 ms I p Fpuls T = 25 C 1200 C T = 80 C 800 C 2 2 2 i t-value, Diode, t = 10 ms, T = 150 C i t 96800 A s P j Power dissipation per Diode P 1400 W D Chip temperature T + 150 C j Storage temperature T -40 ... + 125 stg Thermal resistance, chip case R 0.09 K/W thJC Insulation test voltage, t = 1min. V 4000 Vac is Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 1 Oct-27-1997BYM 600 A 170 DN2 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Free-Wheel Diodes Diode forward voltage V V F I = 300 A, V = 0 V, T = 25 C - 2 2.5 F GE j I = 300 A, V = 0 V, T = 125 C - 1.8 - F GE j Reverse current I mA R V = 1700 V, T = 25 C - 1.1 1.6 CA j V = 1700 V, T = 125 C - 4.4 - CA j Reverse recovery time t s rr I = 300 A, V = -1200 V, V = 0 V F R GE di /dt = -1500 A/s, T = 125 C - 1 - F j Reverse recovery charge Q C rr I = 300 A, V = -1200 V, V = 0 V F R GE di /dt = -1500 A/s F T = 25 C - 28 - j T = 125 C - 100 - j 2 Oct-27-1997

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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