X-On Electronics has gained recognition as a prominent supplier of CY62127DV30LL-55BVXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62127DV30LL-55BVXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62127DV30LL-55BVXI Infineon

CY62127DV30LL-55BVXI electronic component of Infineon
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Part No.CY62127DV30LL-55BVXI
Manufacturer: Infineon
Category: SRAM
Description: Cypress Semiconductor SRAM 1Mb 3V 55ns 64K x 16 LP SRAM
Datasheet: CY62127DV30LL-55BVXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.1891
10 : USD 2.1439
25 : USD 2.0985
50 : USD 2.0533
100 : USD 2.008
500 : USD 1.9626
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.0583
10 : USD 2.2162
25 : USD 2.1748
50 : USD 2.1644
100 : USD 1.9677
250 : USD 1.9262
960 : USD 1.6881
5280 : USD 1.6363
N/A

Obsolete
0
MOQ : 480
Multiples : 480
480 : USD 2.8651
N/A

Obsolete
   
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We are delighted to provide the CY62127DV30LL-55BVXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62127DV30LL-55BVXI and other electronic components in the SRAM category and beyond.

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CY62127DV30 MoBL 1-Mbit (64K 16) Static RAM 1-Mbit (64K 16) Static RAM applications such as cellular telephones. The device also has an Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The Temperature ranges device can be put into standby mode reducing power Industrial: 40 C to 85 C consumption by more than 99% when deselected (CE HIGH or Very high speed: 55 ns both BHE and BLE are HIGH). The input/output pins (I/O 0 through I/O ) are placed in a high-impedance state when: 15 Wide voltage range: 2.2 V to 3.6 V deselected (CE HIGH), outputs are disabled (OE HIGH), both Pin compatible with CY62127BV byte high enable and byte low enable are disabled (BHE, BLE HIGH) or during a write operation (CE LOW and WE LOW). Ultra-low active power Writing to the device is accomplished by taking chip enable (CE) Typical active current: 0.85 mA at f = 1 MHz and write enable (WE) inputs LOW. If byte low enable (BLE) is Typical active current: 5 mA at f = f MAX LOW, then data from I/O pins (I/O through I/O ), is written into 0 7 Ultra-low standby power the location specified on the address pins (A through A ). If 0 15 byte high enable (BHE) is LOW, then data from I/O pins (I/O 8 Easy memory expansion with CE and OE features through I/O ) is written into the location specified on the address 15 pins (A through A ). Automatic power-down when deselected 0 15 Reading from the device is accomplished by taking chip enable Available in Pb-free 48-ball FBGA and 44-pin TSOP Type II (CE) and output enable (OE) LOW while forcing the write enable packages (WE) HIGH. If byte low enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O to 0 Functional Description I/O . If byte high enable (BHE) is LOW, then data from memory 7 appear on I/O to I/O . See the truth table at the back of this 8 15 The CY62127DV30 is a high-performance CMOS static RAM datasheet for a complete description of read and write modes. organized as 64K words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This For a complete list of related documentation, click here. is ideal for providing More Battery Life (MoBL ) in portable Logic Block Diagram DATA IN DRIVERS 10 A 10 A 9 A 8 A 7 A 6 A 64K x 16 5 A RAM Array 4 I/O I/O 0 7 A 3 2048 x 512 I/O I/O A 8 15 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE CE Power -Down Circuit BHE BLE . Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05229 Rev. *R Revised December 21, 2017 ROW DECODER A 11 A 12 A 13 A 14 A 15 SENSE AMPS CY62127DV30 MoBL Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 12 Pin Configurations ...........................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................14 DC Electrical Characteristics ..........................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoCSolutions .......................................................17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 38-05229 Rev. *R Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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