X-On Electronics has gained recognition as a prominent supplier of CY62127DV30LL-55ZXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62127DV30LL-55ZXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62127DV30LL-55ZXI Infineon

CY62127DV30LL-55ZXI electronic component of Infineon
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Part No.CY62127DV30LL-55ZXI
Manufacturer: Infineon
Category: SRAM
Description: SRAM SLO 3.0V SUPER LO PWR 64KX16 SRAM IND
Datasheet: CY62127DV30LL-55ZXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5506 ea
Line Total: USD 2.55 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.5506
10 : USD 2.4921
25 : USD 2.3985
100 : USD 2.1645
250 : USD 2.0358
500 : USD 2.0007

   
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We are delighted to provide the CY62127DV30LL-55ZXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62127DV30LL-55ZXI and other electronic components in the SRAM category and beyond.

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CY62127DV30 MoBL 1-Mbit (64 K 16) Static RAM 1-Mbit (64 K 16) Static RAM applications such as cellular telephones. The device also has an Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The Temperature ranges device can be put into standby mode reducing power Industrial: 40 C to 85 C consumption by more than 99% when deselected (CE HIGH or Very high speed: 55 ns both BHE and BLE are HIGH). The input/output pins (I/O 0 through I/O ) are placed in a high-impedance state when: 15 Wide voltage range: 2.2 V to 3.6 V deselected (CE HIGH), outputs are disabled (OE HIGH), both Pin compatible with CY62127BV byte high enable and byte low enable are disabled (BHE, BLE HIGH) or during a write operation (CE LOW and WE LOW). Ultra-low active power Writing to the device is accomplished by taking chip enable (CE) Typical active current: 0.85 mA at f = 1 MHz and write enable (WE) inputs LOW. If byte low enable (BLE) is Typical active current: 5 mA at f = f MAX LOW, then data from I/O pins (I/O through I/O ), is written into 0 7 Ultra-low standby power the location specified on the address pins (A through A ). If 0 15 byte high enable (BHE) is LOW, then data from I/O pins (I/O 8 Easy memory expansion with CE and OE features through I/O ) is written into the location specified on the address 15 pins (A through A ). Automatic power-down when deselected 0 15 Reading from the device is accomplished by taking Available in Pb-free 48-ball FBGA and 44-pin TSOP Type II chip enable (CE) and output enable (OE) LOW while forcing the packages write enable (WE) HIGH. If byte low enable (BLE) is LOW, then data from the memory location specified by the address pins Functional Description appear on I/O to I/O . If byte high enable (BHE) is LOW, then 0 7 data from memory appear on I/O to I/O . See the truth table at 8 15 The CY62127DV30 is a high-performance CMOS static RAM the back of this datasheet for a complete description of read and organized as 64 K words by 16-bits. This device features write modes. advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable For a complete list of related documentation, click here. Logic Block Diagram DATA IN DRIVERS 10 A 10 A 9 A 8 A 7 A 6 A 64K x 16 5 A 4 RAM Array I/O I/O 0 7 A 3 2048 x 512 I/O I/O A 8 15 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE CE Power -Down Circuit BHE BLE . Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05229 Rev. *O Revised November 21, 2014 ROW DECODER A 11 A 12 A 13 A 14 A 15 SENSE AMPS CY62127DV30 MoBL Contents Product Portfolio ..............................................................3 Package Diagrams .......................................................... 11 Pin Configurations ...........................................................3 Acronyms ........................................................................12 Maximum Ratings .............................................................4 Document Conventions ................................................. 12 Operating Range ...............................................................4 Units of Measure ....................................................... 12 DC Electrical Characteristics ..........................................4 Document History Page ................................................. 13 Capacitance ......................................................................4 Sales, Solutions, and Legal Information ...................... 15 Thermal Resistance ..........................................................5 Worldwide Sales and Design Support ....................... 15 AC Test Loads and Waveforms .......................................5 Products ....................................................................15 Data Retention Characteristics .......................................5 PSoC Solutions ...................................................... 15 Switching Characteristics ................................................6 Cypress Developer Community ................................. 15 Switching Waveforms ......................................................7 Technical Support ..................................................... 15 Truth Table .......................................................................9 Ordering Information ......................................................10 Ordering Code Definitions .........................................10 Document Number: 38-05229 Rev. *O Page 2 of 14

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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