X-On Electronics has gained recognition as a prominent supplier of CY62136ESL-45ZSXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62136ESL-45ZSXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62136ESL-45ZSXI Infineon

Hot CY62136ESL-45ZSXI electronic component of Infineon
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Part No.CY62136ESL-45ZSXI
Manufacturer: Infineon
Category: SRAM
Description: Cypress Semiconductor SRAM 2Mb 45ns 128K x 16 Low Power SRAM
Datasheet: CY62136ESL-45ZSXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
18: USD 2.275 ea
Line Total: USD 40.95 
Availability - 22
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 18  Multiples: 1
Pack Size: 1
Availability Price Quantity
691
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.202
10 : USD 3.575
100 : USD 3.355
250 : USD 3.267
500 : USD 3.124
1000 : USD 3.091
2700 : USD 3.058
5400 : USD 3.047
10800 : USD 3.036

12
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 5.5666
10 : USD 4.6007
25 : USD 4.5994
40 : USD 4.3407
135 : USD 4.1119
270 : USD 3.8701
540 : USD 3.7609
945 : USD 3.6569

22
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 18
Multiples : 1
18 : USD 2.275

   
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We are delighted to provide the CY62136ESL-45ZSXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62136ESL-45ZSXI and other electronic components in the SRAM category and beyond.

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CY62136ESL MoBL 2-Mbit (128 K 16) Static RAM 2-Mbit (128 K 16) Static RAM not toggling. Placing the device into standby mode reduces Features power consumption by more than 99% when deselected (CE HIGH). The input and output pins (I/O through I/O ) are placed Very high speed: 45 ns 0 15 in a high impedance state when the device is deselected (CE Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V HIGH), the outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or Ultra low standby power during a write operation (CE LOW and WE LOW). Typical standby current: 1 A To write to the device, take Chip Enable (CE) and Write Enable Maximum standby current: 7 A (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data Ultra low active power from I/O pins (I/O through I/O ) is written into the location 0 7 Typical active current: 2 mA at f = 1 MHz specified on the address pins (A through A ). If Byte High 0 16 Enable (BHE) is LOW, then data from I/O pins (I/O through 8 Easy memory expansion with CE and OE features I/O ) is written into the location specified on the address pins 15 Automatic power-down when deselected (A through A ). 0 16 To read from the device, take Chip Enable (CE) and Output Complementary metal oxide semiconductor (CMOS) for Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If optimum speed and power Byte Low Enable (BLE) is LOW, then data from the memory Available in Pb-free 44-pin thin small outline package (TSOP) II location specified by the address pins appears on I/O to I/O . If 0 7 package Byte High Enable (BHE) is LOW, then data from memory appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 Functional Description complete description of read and write modes. The device is suitable for interfacing with processors that have The CY62136ESL is a high performance CMOS static RAM TTL I/P levels. It is not suitable for processors that require CMOS organized as 128K words by 16 bits. This device features I/P levels. Please see Electrical Characteristics on page 4 for advanced circuit design to provide ultra low active current. This more details and suggested alternatives. is ideal for providing More Battery Life (MoBL ) in portable applications. The device also has an automatic power down For a complete list of related documentation, click here. feature that reduces power consumption when addresses are Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 A 128 K x 16 5 A 4 RAM Array I/O I/O 0 7 A 3 I/O I/O A 8 15 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-48147 Rev. *L Revised November 29, 2017 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 SENSE AMPS CY62136ESL MoBL Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 12 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagram ............................................................ 13 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 001-48147 Rev. *L Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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